Live working - Eye, face and head protectors against the effects of electric arc - Performance requirements and test methods
This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10h).
ΚΩΔΙΚΟΣ ΠΡΟΪΟΝΤΟΣ:
CYS EN IEC 62819:2023
This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10h).
